Sample Prep Ion Milling
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Fischione 1051 TEM Ion Beam Mill

Ion milling and polishing system for preparing electron-transparent TEM specimens. Dual ion sources, wide energy control, and adjustable incidence angles support fast thinning and low-damage final polishing.

Fischione 1051 TEM Mill
Ion Energy Range ~100 eV to 10 keV
Milling Angle -15 to +10 deg
Specimen Size 3 mm dia x 250 um
Ion Sources Dual TrueFocus

System Capabilities

The 1051 TEM Mill prepares thin, electron-transparent specimens using dual ion sources with independently controlled energy. It supports high-rate material removal for bulk thinning and low-energy polishing for final surface cleanup.

Adjustable incidence angles, 360-degree rotation with rocking, and beam sequencing help control uniformity and reduce preferential milling. Optional cryogenic cooling is available for temperature-sensitive materials.

Operating Modes

High-Energy Milling

Ion energies up to 10 keV for rapid thinning from bulk to near electron transparency.

Low-Energy Polishing

Ion energies down to about 100 eV for final cleanup and damage reduction.

Double-Sided Milling

Beams directed to both surfaces for symmetric thinning and reduced redeposition.

Automated Recipes

Multi-step sequences with energy, angle, time, and temperature control for repeatable runs.

Technical Specifications

Ion Sources Two TrueFocus ion sources, independently controlled
Ion Energy ~100 eV to 10 keV (variable)
Beam Current Density Up to ~10 mA/cm^2
Milling Angle -15 to +10 deg incidence
Specimen Size Approx. 3 mm diameter x 250 um thick
Stage Motion 360 deg rotation, variable speed, rocking and beam sequencing
Process Gas Ultra-high purity argon (99.999%), ~15 psi
Cooling (Optional) LN2 conductive stage, standard 3-5 h dewar (extended 12-18 h)
Power 100/120/220/240 VAC, 50/60 Hz, ~720 W

Comparison: Ion Milling vs. Mechanical Pre-Thinning

Comparing the ion beam mill to traditional mechanical pre-thinning and dimpling approaches.

Feature This System (Ion Milling) Traditional Method (Mechanical)
Material Removal Argon ion beam thinning and polishing Abrasive grinding and dimpling
Process Role Final step to reach electron transparency Pre-thinning to reduce ion milling time
Damage Control Low-energy polishing to reduce prep damage Mechanical steps can introduce surface damage
Angle Control Precise incidence angle and beam sequencing Limited to fixture and wheel geometry
Best Use Final thinning for TEM/STEM readiness Bulk material removal before ion milling

Common Applications

Plan-View TEM Uniform thinning of bulk and thin film samples for TEM imaging.
Cross-Section TEM Preparation of layered or composite cross sections.
Low-Damage Polishing Final low-energy cleaning to reduce artifacts.
Cryogenic Milling Optional cooling for temperature-sensitive materials.